the tech giant Samsung Electronics announced today that it has begun mass-producing the first semiconductors of 3 nanometers in the world, a new generation product that allows more performance and less energy consumption and that comes at a time when bottlenecks persist in this sector.
Samsung manufactures these new ICs with a multi-input transistor technology it calls Multi-Bridge-Channel (MBCFET) that will allow significant advances over the current FinFET fabrication technology used for 5-nanometer semiconductors.
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The first generation of 3-nanometer semiconductors that it started producing today can “reduce energy consumption by up to 45%, improve performance by 23% and reduce its area by 16%” compared to 5 nanometers, the company explained in a statement.
The second generation will be even smaller in volume and more efficient, taking up 35% less physical space and achieving a 30% performance improvement with 50% less power consumption, according to the Suwon-based company ( south of Seoul).
Thus Samsung Electronics manages to get ahead of the Taiwanese TSMCwhich plans to start manufacturing its 3-nanometer semiconductors in the second half of this year.
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Samsung, which is the world’s largest memory chip maker and the world’s second largest integrated circuit smelter (has a 16.3% market share, behind TSMC’s 53.5%, according to the specialist outlet TrendForce ), has said that its technology to make 2-nanometer semiconductors is in the early stages of development with the goal of starting production in 2025.
Three years ago the company presented a large investment plan between now and 2030 valued at 171 trillion won (about 131,565 million dollars) in relation to smelters and related technologies.
Source: Elcomercio
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